p-type doping of gallium antimonide grown by molecular beam epitaxy using silicon
- 期刊名称Applied Physics Letters
- 作者Rossi, T. M.; Collins, D. A.; Chow, D. H.; McGill, T. C.
- 卷第57卷
- 期第21期
- 印刷ISSN0003-6951
- 文件大小547.40KB
- 发表时间1990
- DOI10.1063/1.103907
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