Background pressure dependence of GaAs and AlGaAs growth rates in gas-source molecular beam epitaxy

• 作者Junji Saito; Takeshi Maeda; Katsuji Ono; Kazuo Kondo
• 卷第111卷
• 印刷ISSN0022-0248
• 文件大小510.29KB
• 发表时间1991
• DOI10.1016/0022-0248(91)91036-a
• 页码544-549