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Study of boron depth profiles in IPI amorphous silicon films after thermal annealing using the (p, α) reaction

Study of boron depth profiles in IPI amorphous silicon films after thermal annealing using the (p, α) reaction

Changgeng Liao; Zhihao Zheng; Yongqiang Wang; Shengsheng Yang; Hui Jiang

作者Changgeng Liao; Zhihao Zheng; Yongqiang Wang; Shengsheng Yang; Hui Jiang
卷第42卷
期第17期
印刷ISSN0042-207X
文件大小315.74KB
发表时间1991
DOI10.1016/0042-207x(91)90187-n
页码1129-1132

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