Iso-electronic impurity-induced disordering: AlxGa1−xAs-GaAs/In
- 期刊名称Applied Physics Letters
- 作者Tang, T. K.; Alwan, J. J.; Herzinger, C. M.; Cockerill, T. M.; Crook, A.; DeTemple, T. A.; Coleman, J. J.; Baker, J. E.
- 卷第59卷
- 期第22期
- 印刷ISSN0003-6951
- 文件大小619.66KB
- 发表时间1991
- DOI10.1063/1.105840
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