[IEEE International Electron Devices Meeting 1991 [Technical Digest] - Washington, DC, USA (8-11 Dec. 1991)] International Electron Devices Meeting 1991 [Technical Digest] - Hot-carrier light emission in SOI MOSFET simulated with coupled Monte Carlo and energy transport analysis
Koyanagi, M.; Kurino, H.; Kiba, H.; Mori, H.; Hashimoto, T.; Hiruma, Y.; Fujimori, T.; Yamaguchi, Y.; Nishimura, T.
- 作者Koyanagi, M.; Kurino, H.; Kiba, H.; Mori, H.; Hashimoto, T.; Hiruma, Y.; Fujimori, T.; Yamaguchi, Y.; Nishimura, T.
- 文件大小319.62KB
- 发表时间1991
- DOI10.1109/iedm.1991.235427
- 页码45-48