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The influence of deposition temperature and annealing temperature on the optoelectronic properties of hydrogenated amorphous silicon films

The influence of deposition temperature and annealing temperature on the optoelectronic properties of hydrogenated amorphous silicon films

Kunst, M.; Neitzert, H.-C.
  • 期刊名称Journal of Applied Physics
  • 作者Kunst, M.; Neitzert, H.-C.
  • 卷第69卷
  • 期第12期
  • 印刷ISSN0021-8979
  • 文件大小1392.79KB
  • 发表时间1991
  • DOI10.1063/1.347444
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