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SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - <title>Type-II heterojunctions in GaSb-InAs solid solutions: physics and applications</title>

SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Type-II heterojunctions in GaSb-InAs solid solutions: physics and applications

Mikhailova, Maya P.; Baranov, Alexej N.; Imenkov, Albert N.; Yakovlev, Yury P.; Razeghi, Manijeh
  • 作者Mikhailova, Maya P.; Baranov, Alexej N.; Imenkov, Albert N.; Yakovlev, Yury P.; Razeghi, Manijeh
  • 卷第1361卷
  • 印刷ISSN0277-786X
  • 文件大小1175.73KB
  • 发表时间1991
  • DOI10.1117/12.24430
  • 页码674-685
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