Studies of MOS and Heterojunction Devices Using Doped μc-Si and a-Si
- 期刊名称MRS Proceedings
- 作者Lee, D. R.; Bjorkman, C. H.; Wang, C.; Lucovsky, G.
- 卷第219卷
- 电子ISSN1946-4274
- 文件大小713.22KB
- 发表时间1991-1
- DOI10.1557/proc-219-395
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