SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Behavior of amorphous semiconductors As2S3 layers after photon, electron, or x-ray exposures
- 作者Guttmann, Peter; Danev, Gentsho V.; Spassova, Erintche M.; Babin, Sergey V.; Razeghi, Manijeh
- 卷第1361卷
- 印刷ISSN0277-786X
- 文件大小777.44KB
- 发表时间1991
- DOI10.1117/12.24327
- 页码999-1010
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