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Development of OXSIM2D: A Simulation Program of SiO2 Growth and Stress Generation in Thermal Oxidation Process of Silicon.

Development of OXSIM2D: A Simulation Program of SiO2 Growth and Stress Generation in Thermal Oxidation Process of Silicon.

SAITO, Naoto; SAKATA, Shinji; IKEGAWA, Masahiro; MIURA, Hideo; OHTA, Hiroyuki; SHIMIZU, Tasuku; ISOMAE, Seiichi; MASUDA, Hiroo
  • 期刊名称Transactions of the Japan Society of Mechanical Engineers Series A
  • 作者SAITO, Naoto; SAKATA, Shinji; IKEGAWA, Masahiro; MIURA, Hideo; OHTA, Hiroyuki; SHIMIZU, Tasuku; ISOMAE, Seiichi; MASUDA, Hiroo
  • 卷第57卷
  • 期第541期
  • 印刷ISSN0387-5008
  • 电子ISSN1884-8338
  • 文件大小690.84KB
  • 发表时间1991
  • DOI10.1299/kikaia.57.2057
  • 页码2057-2062
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