Studies on the high-frequency properties of 〈111〉, 〈110〉 and 〈100〉 oriented GaAs IMPATT diodesS. P. Pati; R. Mukherjee; J. P. Banerjee; S. K. Roy · 1993

Computer simulation experiment on the mm-wave properties of indium phosphide double drift impattsJ. P. Banerjee; S. P. Pati; S. K. Roy · 1988

The distribution of negative resistivity in the active layer of millimetre-wave double-drift region diodesS. P. Pati; J. P. Banerjee; S. K. Roy · 1989

Computer studies on the space charge dependence of avalanche zone width and conversion efficiency, of single driftp+nn+andn+pp+indium phosphide impattsJ. P. Banerjee; S. P. Pati; S. K. Roy · 1984