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Thickness uniformity and electrical properties of ultrathin gate oxides grown in N2O ambient by rapid thermal processing

Thickness uniformity and electrical properties of ultrathin gate oxides grown in N2O ambient by rapid thermal processing

Yoon, G. W.; Joshi, A. B.; Ahn, J.; Kwong, D. L.

作者Yoon, G. W.; Joshi, A. B.; Ahn, J.; Kwong, D. L.
卷第72卷
期第12期
印刷ISSN0021-8979
文件大小748.50KB
发表时间1992
DOI10.1063/1.351922

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