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On the design of doping concentration profiles for GaAs transferred-electron device layers

On the design of doping concentration profiles for GaAs transferred-electron device layers

A.R. Batchelor

作者A.R. Batchelor
卷第35卷
期第5期
印刷ISSN0038-1101
文件大小493.79KB
发表时间1992
DOI10.1016/0038-1101(92)90045-e
页码735-741

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