Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface
- 作者Martina Heinemann; Matthias Scheffler
- 印刷ISSN0169-4332
- 文件大小211.69KB
- 发表时间1992
- DOI10.1016/0169-4332(92)90312-l
- 页码628-631
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