Damage introduction in InP and InGaAs during Ar and H2 plasma exposure

• 期刊名称Applied Physics Letters
• 作者Pearton, S. J.; Ren, F.; Abernathy, C. R.; Hobson, W. S.; Fullowan, T. R.; Esagui, R.; Lothian, J. R.
• 卷第61卷
• 期第5期
• 印刷ISSN0003-6951
• 文件大小656.52KB
• 发表时间1992
• DOI10.1063/1.107845