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Transport and recombination in a-Si:H p-i-n diodes under forward bias conditions

Transport and recombination in a-Si:H p-i-n diodes under forward bias conditions

R. Carius; F. Becker; R. Brüggemann; F. Finger; C. Beneking; H. Wagner

作者R. Carius; F. Becker; R. Brüggemann; F. Finger; C. Beneking; H. Wagner
印刷ISSN0022-3093
文件大小340.02KB
发表时间1993
DOI10.1016/0022-3093(93)90611-z

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