Origin and formation mechanism of elliptic-shaped surface defect on GaAs layers grown by molecular beam epitaxy

• 作者Shigenori Takagishi; Hideki Yao; Hirotaro Mori
• 卷第129卷
• 印刷ISSN0022-0248
• 文件大小1415.45KB
• 发表时间1993
• DOI10.1016/0022-0248(93)90478-f
• 页码443-448