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A slow positron beam study of vacancy formation in fluorine-implanted silicon

A slow positron beam study of vacancy formation in fluorine-implanted silicon

M. Fujinami; N. B. Chilton
  • 作者M. Fujinami; N. B. Chilton
  • 文件大小672.54KB
  • 发表时间1993
  • DOI10.1063/1.352968
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