The yield point of In-doped GaAs between 500 and 900 °C
Siethoff, Hans; Brion, Hans Georg; Völkl, Johannes
- 期刊名称Journal of Applied Physics
- 作者Siethoff, Hans; Brion, Hans Georg; Völkl, Johannes
- 卷第74卷
- 期第1期
- 印刷ISSN0021-8979
- 文件大小1031.14KB
- 发表时间1993
- DOI10.1063/1.354131