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The yield point of In-doped GaAs between 500 and 900 °C

The yield point of In-doped GaAs between 500 and 900 °C

Siethoff, Hans; Brion, Hans Georg; Völkl, Johannes
  • 期刊名称Journal of Applied Physics
  • 作者Siethoff, Hans; Brion, Hans Georg; Völkl, Johannes
  • 卷第74卷
  • 期第1期
  • 印刷ISSN0021-8979
  • 文件大小1031.14KB
  • 发表时间1993
  • DOI10.1063/1.354131
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