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In situ investigation of temperature and bias dependent effects on the oxide growth of Si and Ge in an electron cyclotron resonance

In situ investigation of temperature and bias dependent effects on the oxide growth of Si and Ge in an electron cyclotron resonance

Y. Z. Hu
  • 作者Y. Z. Hu
  • 文件大小798.40KB
  • 发表时间1993
  • DOI10.1116/1.578324
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