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Reactive ion etching of via holes for GaAs high electron mobility transistors and monolithic microwave integrated circuits using Cl2/BCl3/Ar gas mixtures

Reactive ion etching of via holes for GaAs high electron mobility transistors and monolithic microwave integrated circuits using Cl2/BCl3/Ar gas mixtures

Nordheden, K. J.

期刊名称Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
作者Nordheden, K. J.
卷第11卷
期第5期
印刷ISSN0734-211X
文件大小689.99KB
发表时间1993-9
DOI10.1116/1.586515

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