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High mobility electron gases and modulation-doped field effect transistors fabricated in Si/Si1−xGex by rapid thermal chemical vapor deposition

High mobility electron gases and modulation-doped field effect transistors fabricated in Si/Si1−xGex by rapid thermal chemical vapor deposition

Venkataraman, V.

期刊名称Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
作者Venkataraman, V.
卷第11卷
期第3期
印刷ISSN0734-211X
文件大小618.79KB
发表时间1993-5
DOI10.1116/1.586835

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