A positron annihilation and Hall effect study of vacancy defects in III-V compound semiconductors. I. Gallium phosphide
- 期刊名称Semiconductor Science and Technology
- 作者Krause-Rehberg, R; Polity, A; Siegel, W; Kuhnel, G
- 卷第8卷
- 期第2期
- 印刷ISSN0268-1242
- 电子ISSN1361-6641
- 文件大小700.04KB
- 发表时间1993-02-01
- DOI10.1088/0268-1242/8/2/022
- 页码290-297
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