Influence of GaAs buffer thickness on low-frequency and microwave noise in GaAs MESFETs grown on InP substrates
- 期刊名称Electronics Letters
- 作者Chertouk, M.; Boudiaf, A.; Azoulay, R.; Clei, A.; Chovet, A.
- 卷第29卷
- 期第4期
- 印刷ISSN0013-5194
- 文件大小290.02KB
- 发表时间1993
- DOI10.1049/el:19930257
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