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Effects of substrate temperature and V/III flux ratio on the growth of InAIAs on InP substrates by molecular beam epitaxy

Effects of substrate temperature and V/III flux ratio on the growth of InAIAs on InP substrates by molecular beam epitaxy

S.F. Yoon; Y.B. Miao; K. Radhakrishnan; S. Swaminathan
  • 作者S.F. Yoon; Y.B. Miao; K. Radhakrishnan; S. Swaminathan
  • 卷第144卷
  • 印刷ISSN0022-0248
  • 文件大小416.03KB
  • 发表时间1994
  • DOI10.1016/0022-0248(94)90446-4
  • 页码121-125
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