In situ ellipsometric control of Si1−xGexSi heterostructures grown by chemical beam epitaxy
- 作者P. Boucaud; F. Glowacki; F. Ferrieu; A. Larré; A. Perio; D. Bensahel
- 卷第248卷
- 期第1期
- 印刷ISSN0040-6090
- 文件大小545.48KB
- 发表时间1994
- DOI10.1016/0040-6090(94)90201-1
- 页码1-5
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