Sub-atomic-layer epitaxy of Si using Si2H6
- 作者Yoshiyuki Suda; Masahiro Ishida; Mitsutomi Yamashita; Hiroaki Ikeda
- 印刷ISSN0169-4332
- 文件大小533.91KB
- 发表时间1994
- DOI10.1016/0169-4332(94)90237-2
- 页码332-337
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