Layer controlled growth of oxide superconductors
- 作者Maki Kawai; Z.-Y. Liu; T. Hanada; M. Katayama; M. Aono; C.F. McConville
- 印刷ISSN0169-4332
- 文件大小824.71KB
- 发表时间1994
- DOI10.1016/0169-4332(94)90263-1
- 页码487-493
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MOVPE growth of strained InGaAsN/GaAs quantum wellsHisao Saito; Toshiki Makimoto; Naoki Kobayashi · 1998
Electron conduction in GaAs atomic layer doped with SiMakimoto, Toshiki; Kobayashi, Naoki; Horikoshi, Yoshiji · Journal of Applied Physics · 1988
Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAsKobayashi, Naoki; Makimoto, Toshiki · Japanese Journal of Applied Physics · 1985
Flow-rate modulation epitaxy of GaAs and AlGaAsKobayashi, Naoki; Makimoto, Toshiki; Yamauchi, Yoshiharu; Horikoshi, Yoshiji · Journal of Applied Physics · 1989
Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAsMakimoto, Toshiki; Kobayashi, Naoki · Applied Physics Letters · 1995
Nitridation of GaAs surfaces using nitrogen through a hot tungsten filamentMakimoto, Toshiki; Kobayashi, Naoki · Applied Physics Letters · 1995