Effects of SiH2Cl2 on low-temperature (≤200°C) Si epitaxy by photochemical vapor deposition
- 作者Takayuki Oshima; Masashi Sano; Akira Yamada; Makoto Konagai; Kiyoshi Takahashi
- 印刷ISSN0169-4332
- 文件大小283.86KB
- 发表时间1994
- DOI10.1016/0169-4332(94)90412-x
- 页码215-219
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