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[IEEE 1994 IEEE Hong Kong Electron Devices Meeting - Hong Kong (18 July 1994)] 1994 IEEE Hong Kong Electron Devices Meeting - Electrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniques

[IEEE 1994 IEEE Hong Kong Electron Devices Meeting - Hong Kong (18 July 1994)] 1994 IEEE Hong Kong Electron Devices Meeting - Electrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniques

Xu, Z.; Lai, P.T.; Ng, W.T.

作者Xu, Z.; Lai, P.T.; Ng, W.T.
文件大小221.99KB
发表时间1994
DOI10.1109/hkedm.1994.395138
页码18-21

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