A novel self-aligned TiN formation by N/sub 2//sup +/ implantation during two-step annealing Ti-salicidation for submicrometer CMOS technology application

• 期刊名称IEEE Electron Device Letters
• 作者Chen, C.W.; Fang, Y.K.; Hsieh, J.C.; Liang, M.S.
• 卷第15卷
• 期第9期
• 印刷ISSN0741-3106
• 电子ISSN1558-0563
• 文件大小253.75KB
• 发表时间1994-09
• DOI10.1109/55.311127
• 页码339-341