![Comparison of 80-200 nm gate length Al0.25GaAs/GaAs/(GaAs:AlAs), Al0.3GaAs/In0.15 GaAs/GaAs, and In0.52AlAs/In0.65GaAs/InP HEMTs]()
Comparison of 80-200 nm gate length Al0.25GaAs/GaAs/(GaAs:AlAs), Al0.3GaAs/In0.15 GaAs/GaAs, and In0.52AlAs/In0.65GaAs/InP HEMTsThayne, I.G.; Jensen, G.U.; Holland, M.C.; Yaochung Chen; Weigi Li; Paulsen, A.; Davies, J.H.; Beaumont, S.P.; Bhattacharya, P.K. · 1995