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An Advanced NAND-Structure Cell Technology for Reliable 3.3 V 64 Mb Electrically Erasable and Programmable Read Only Memories (EEPROMs)

An Advanced NAND-Structure Cell Technology for Reliable 3.3 V 64 Mb Electrically Erasable and Programmable Read Only Memories (EEPROMs)

Aritome, Seiichi; Hatakeyama, Ikuo; Endoh, Tetsuo; Yamaguchi, Tetsuya; Shuto, Susumu; Iizuka, Hirohisa; Maruyama, Tooru; Watanabe, Hiroshi; Hemink, Gertjan; Sakui, Koji; Tanaka, Tomoharu; Momodomi, Masaki; Shirota, Riichiro
  • 期刊名称Japanese Journal of Applied Physics
  • 作者Aritome, Seiichi; Hatakeyama, Ikuo; Endoh, Tetsuo; Yamaguchi, Tetsuya; Shuto, Susumu; Iizuka, Hirohisa; Maruyama, Tooru; Watanabe, Hiroshi; Hemink, Gertjan; Sakui, Koji; Tanaka, Tomoharu; Momodomi, Masaki; Shirota, Riichiro
  • 卷第33卷
  • 印刷ISSN0021-4922
  • 电子ISSN1347-4065
  • 文件大小1907.96KB
  • 发表时间1994-1-30
  • DOI10.1143/JJAP.33.524
  • 页码524-528
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