Metal-organic chemical vapor deposition growth of GaN
- 作者Da-chen Lu; Du Wang; Xiaohui Wang; Xianglin Liu; Jianrong Dong; Weibin Gao; Chengji Li; Yunyan Li
- 卷第29卷
- 印刷ISSN0921-5107
- 文件大小289.34KB
- 发表时间1995
- DOI10.1016/0921-5107(94)04036-4
- 页码58-60
Positron annihilation in narrow-gap semiconductorsN. Bouarissa; R. N. West; H. Aourag · 1995
Positron energy levels in narrow gap semiconductorsN. Bouarissa; H. Aourag · 1995
Electronic structure of the quaternary alloy GaxIn1−xAsyP1−yH. Abid; N. Badi; M. Driz; N. Bouarissa; K.H. Benkabou; B. Khelifa; H. Aourag · 1995
Conduction Band Edge Charge Densities in InxGa1−xSbN. Bouarissa; H. Aourag · 1995
Work function and energy levels of positrons in elemental semiconductorsN. Bouarissa; B. Abbar; J.P. Dufour; N. Amrane; H. Aourag · 1996
Band structure calculations of InxGa1−xSb under pressureN. Bouarissa; H. Aourag · 1995
Pressure Dependence of Electron and Positron Band Structures in Elemental SemiconductorsS. T. Alkhafaji; N. Amrane; N. Bouarissa; N. Badi; B. Soudini; M. Sehil; H. Aourag · 1995
Calculation of the electronic and elastic properties of carbonA. Laref; B. Bouhafs; H. Aourag; N. Bouarissa · 1998