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Thermal annealing of light-induced defects in p-i-p and n-i-n hydrogenated amorphous silicon structures: Influence of hole and electron injection

Thermal annealing of light-induced defects in p-i-p and n-i-n hydrogenated amorphous silicon structures: Influence of hole and electron injection

Meaudre, M.; Meaudre, R.; Vignoli, S.
  • 期刊名称Journal of Applied Physics
  • 作者Meaudre, M.; Meaudre, R.; Vignoli, S.
  • 卷第77卷
  • 期第11期
  • 印刷ISSN0021-8979
  • 文件大小691.42KB
  • 发表时间1995
  • DOI10.1063/1.359212
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