Thermal annealing of light-induced defects in p-i-p and n-i-n hydrogenated amorphous silicon structures: Influence of hole and electron injection
Meaudre, M.; Meaudre, R.; Vignoli, S.
- 期刊名称Journal of Applied Physics
- 作者Meaudre, M.; Meaudre, R.; Vignoli, S.
- 卷第77卷
- 期第11期
- 印刷ISSN0021-8979
- 文件大小691.42KB
- 发表时间1995
- DOI10.1063/1.359212