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GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells

GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells

Baillargeon, J. N.; Cheng, K. Y.; Cho, A. Y.

期刊名称Applied Physics Letters
作者Baillargeon, J. N.; Cheng, K. Y.; Cho, A. Y.
卷第67卷
期第20期
印刷ISSN0003-6951
文件大小253.29KB
发表时间1995
DOI10.1063/1.114825

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