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[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - Threshold voltage adjustment in SOI MOSFETs by employing tantalum for gate material

[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - Threshold voltage adjustment in SOI MOSFETs by employing tantalum for gate material

Shimada, H.; Hirano, Y.; Ushiki, T.; Ohmi, T.

作者Shimada, H.; Hirano, Y.; Ushiki, T.; Ohmi, T.
文件大小345.55KB
发表时间1995
DOI10.1109/iedm.1995.499357
页码881-884

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