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Characterization of Deep Levels in Si-Doped
<b>
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Layers Grown by Molecular Beam Epitaxy

Characterization of Deep Levels in Si-Doped I n _xA l _{1-
x}A s Layers Grown by Molecular Beam Epitaxy

Malinin, Alexei; Tomozawa, Hidemasa; Hashizume, Tamotsu; Hasegawa, Hideki

期刊名称Japanese Journal of Applied Physics
作者Malinin, Alexei; Tomozawa, Hidemasa; Hashizume, Tamotsu; Hasegawa, Hideki
卷第34卷
印刷ISSN0021-4922
电子ISSN1347-4065
文件大小763.05KB
发表时间1995-2-28
DOI10.1143/JJAP.34.1138
页码1138-1142

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