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Defect-Free Band-Edge Photoluminescence in SiGeC Strained Layers Grown by Rapid Thermal Chemical Vapor Deposition

Defect-Free Band-Edge Photoluminescence in SiGeC Strained Layers Grown by Rapid Thermal Chemical Vapor Deposition

Liu, C. W.; Amour, A. St.; Sturm, J. C.; Lacroix, Y. R. J.; Thewalt, M. L. W.

期刊名称MRS Proceedings
作者Liu, C. W.; Amour, A. St.; Sturm, J. C.; Lacroix, Y. R. J.; Thewalt, M. L. W.
卷第379卷
电子ISSN1946-4274
文件大小369.01KB
发表时间1995-1
DOI10.1557/proc-379-441

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