New high power planar gate GaAs MESFETs with improved gate-drain breakdown voltage
- 期刊名称Electronics Letters
- 作者Fujimoto, H.; Tamura, A.; Maeda, M.; Tanabe, M.
- 卷第31卷
- 期第2期
- 印刷ISSN0013-5194
- 电子ISSN1350-911X
- 文件大小263.86KB
- 发表时间1995-01-19
- DOI10.1049/el:19950070
- 页码137-139
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