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Experimental research on the sensitivity and noise level of bipolar and CMOS integrated magnetotransistors and judgement of their applicability in weak-field magnetometers

Experimental research on the sensitivity and noise level of bipolar and CMOS integrated magnetotransistors and judgement of their applicability in weak-field magnetometers

Chaplygin, Y
  • 期刊名称Sensors and Actuators A: Physical
  • 作者Chaplygin, Y
  • 卷第49卷
  • 期第3期
  • 印刷ISSN0924-4247
  • 文件大小328.68KB
  • 发表时间1995-7
  • DOI10.1016/0924-4247(96)80033-1
  • 页码163-166
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