Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method

• 作者Takayuki Shima; Yunosuke Makita; Shinji Kimura; Tsutomu Iida; Xiaohua Fang; De-sheng Jiang; Kazuhiro Kudo; Kuniaki Tanaka
• 卷第120卷
• 印刷ISSN0168-583X
• 文件大小483.93KB
• 发表时间1996
• DOI10.1016/s0168-583x(96)00530-7
• 页码293-297