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The GaAs heterojunction bipolar transistor: an electron device with optical device reliability

The GaAs heterojunction bipolar transistor: an electron device with optical device reliability

T.S. Henderson
  • 作者T.S. Henderson
  • 卷第36卷
  • 印刷ISSN0026-2714
  • 文件大小568.81KB
  • 发表时间1996
  • DOI10.1016/0026-2714(96)00220-x
  • 页码1879-1886
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