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Incorporation of arsenic and phosphorus in GaxIn1−xAsyP1−y alloys grown by molecular-beam epitaxy using solid phosphorus and arsenic valved cracking cells

Incorporation of arsenic and phosphorus in GaxIn1−xAsyP1−y alloys grown by molecular-beam epitaxy using solid phosphorus and arsenic valved cracking cells

Baillargeon, J. N.; Cho, A. Y.; Cheng, K. Y.

期刊名称Journal of Applied Physics
作者Baillargeon, J. N.; Cho, A. Y.; Cheng, K. Y.
卷第79卷
期第10期
印刷ISSN0021-8979
文件大小320.05KB
发表时间1996
DOI10.1063/1.362429

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