Model for diffusion and growth of silicon on Si(100) with inequivalent sites in a square lattice
- 期刊名称Physical Review B
- 作者Iguain, J. L.; Mártin, H. O.; Aldao, C. M.
- 卷第54卷
- 期第12期
- 印刷ISSN0163-1829
- 电子ISSN1095-3795
- 文件大小190.55KB
- 发表时间1996-9-15
- DOI10.1103/PhysRevB.54.8751
- 页码8751-8755
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