The temperature dependence of the ion beam induced interfacial amorphization in silicon
- 期刊名称Applied Physics Letters
- 作者Henkel, T.; Heera, V.; Kögler, R.; Skorupa, W.; Seibt, M.
- 卷第68卷
- 期第24期
- 印刷ISSN0003-6951
- 文件大小346.06KB
- 发表时间1996
- DOI10.1063/1.115781
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