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Interface state-induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

Interface state-induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

Kobayashi, H.; Namba, K.; Yamashita, Y.; Nakato, Y.; Komeda, T.; Nishioka, Y.

期刊名称Journal of Applied Physics
作者Kobayashi, H.; Namba, K.; Yamashita, Y.; Nakato, Y.; Komeda, T.; Nishioka, Y.
卷第80卷
期第3期
印刷ISSN0021-8979
文件大小390.41KB
发表时间1996
DOI10.1063/1.362954

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