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[IEEE Third European Conference on Radiation and its Effects on Components and Systems - Arcachon, France (18-22 Sept. 1995)] Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems - Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer

[IEEE Third European Conference on Radiation and its Effects on Components and Systems - Arcachon, France (18-22 Sept. 1995)] Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems - Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer

McMorrow, D.; Weatherford, T.R.; Knudson, A.R.; Buchner, S.; Melinger, J.S.; Lan Hu Tran, ; Campbell, A.B.; Marshall, P.W.; Dale, C.J.; Peczalski, A.; Baiers, S.
  • 作者McMorrow, D.; Weatherford, T.R.; Knudson, A.R.; Buchner, S.; Melinger, J.S.; Lan Hu Tran, ; Campbell, A.B.; Marshall, P.W.; Dale, C.J.; Peczalski, A.; Baiers, S.
  • 文件大小659.47KB
  • 发表时间1996
  • DOI10.1109/radecs.1995.509805
  • 页码373-378
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