[IEEE Third European Conference on Radiation and its Effects on Components and Systems - Arcachon, France (18-22 Sept. 1995)] Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems - Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer
McMorrow, D.; Weatherford, T.R.; Knudson, A.R.; Buchner, S.; Melinger, J.S.; Lan Hu Tran, ; Campbell, A.B.; Marshall, P.W.; Dale, C.J.; Peczalski, A.; Baiers, S.
- 作者McMorrow, D.; Weatherford, T.R.; Knudson, A.R.; Buchner, S.; Melinger, J.S.; Lan Hu Tran, ; Campbell, A.B.; Marshall, P.W.; Dale, C.J.; Peczalski, A.; Baiers, S.
- 文件大小659.47KB
- 发表时间1996
- DOI10.1109/radecs.1995.509805
- 页码373-378