Strained SiGe-alloy layers formed by solid phase epitaxial growth of Ge+ ion implanted silicon
- 作者P. Songsiriritthigul; G. Holmén; E. Olsson
- 卷第122卷
- 期第4期
- 印刷ISSN0168-583X
- 文件大小574.52KB
- 发表时间1997
- DOI10.1016/s0168-583x(96)00824-5
- 页码630-634
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