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Studies on the growth mechanism of InGaAs during current controlled liquid phase epitaxy

Studies on the growth mechanism of InGaAs during current controlled liquid phase epitaxy

R.S. Qhalid Fareed; R. Dhanasekaran

作者R.S. Qhalid Fareed; R. Dhanasekaran
卷第51卷
期第3期
印刷ISSN0254-0584
文件大小521.26KB
发表时间1997
DOI10.1016/s0254-0584(97)80312-4
页码239-245

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